International Journal of Materials Chemistry and Physics
Articles Information
International Journal of Materials Chemistry and Physics, Vol.1, No.1, Aug. 2015, Pub. Date: Jul. 23, 2015
Effect of Surfactant on Electrical Characterization of ZnO Thin Film Based MOS Capacitors
Pages: 86-92 Views: 4005 Downloads: 1176
Authors
[01] M. Vishwas, Department of Physics, Government Science College (Autonomous), Bangalore, India.
[02] K. Narasimha Rao, Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, India.
[03] Ashok M. Raichur, Department of Materials Engineering, Indian Institute of Science, Bangalore, India.
Abstract
Zinc oxide (ZnO) thin films were prepared on p-silicon (100) substrates by the sol-gel technique using zinc acetate dehydrate as a precursor material with and without surfactant. The films were heat treated by microwave-assisted method and annealed at various temperatures in ambient air. Different nano-structures were obtained by the varying annealing conditions. The structural characterization of ZnO films were carried out using x-ray diffraction (XRD) and scanning electron microscopy (SEM). The metal-oxide-semiconductor (MOS) capacitors were fabricated using ZnO film. The electrical properties of ZnO films with surfactant were studied from current-voltage (I-V), dissipation-voltage (D-V) and capacitance-voltage (C-V) characteristics and found that the dielectric constant of ZnO film increased with the additive surfactant. The leakage current density in ZnO film decreased and resistivity increased with surfactant.
Keywords
ZnO, Sol-Gel, Thin Films, Nano-Structures, MOS-Capacitor
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