International Journal of Materials Chemistry and Physics
Articles Information
International Journal of Materials Chemistry and Physics, Vol.1, No.3, Dec. 2015, Pub. Date: Oct. 19, 2015
Synthesis and Properties of Titanium Nitride Thin Films Prepared by Metal Organic Chemical Vapour Deposition Technique
Pages: 308-322 Views: 2059 Downloads: 1817
Authors
[01] Ogunmola Enoch D., Engineering Division, Prototype Engineering Development Institute, Ilesa, Osun State, Nigeria.
[02] Famojuro A. T., Department of Chemistry, Obafemi Awolowo University, Ile-Ife, Nigeria.
[03] Olofinjana B., Department of Physics, Obafemi Awolowo University, Ile-Ife, Nigeria.
[04] Akinwunmi O., Department of Physics, Obafemi Awolowo University, Ile-Ife, Nigeria.
[05] Ojo I. A. O., Department of Chemistry, Obafemi Awolowo University, Ile-Ife, Nigeria.
[06] Ajayi E. O. B., Department of Physics, Obafemi Awolowo University, Ile-Ife, Nigeria.
Abstract
Titanium nitride thin films were prepared by MOCVD technique from Ethylenediamine based metal organic precursor as a source material and were investigated in terms of volatility and stability by employing TG/DTA in transpiration mode, which led to thermal degradation in the temperature range of 105.9°C and 540.3°C. The effect of deposition temperature on TiN thin film deposited on soda-lime glass substrates were characterized using Ultraviolet-Visible Spectroscopy, Four-point probe technique, Scanning Electron Microscopy (SEM), optical microscope and Energy Dispersive X-ray Spectroscopy (EDS). Experimental results show that TiN thin film exhibited an amorphous behavior with honeycomb-like nature of surface roughness which depends on deposition temperature. The nitrogen atomic (%) proportion in TiN thin film increased from 46 to 51, the estimated thickness range from 152.08 to 167.29 and direct optical band gap varies from 3.62 eV to 3.68 eV as deposition temperature increases. The electrical resistivity ranging from 1.58 Ωcm to 1.81Ωcm also depends on deposition temperature. The findings showed that the synthesized precursor is a promising material for deposition of quality TiN thin films. It also demonstrates that the properties of the films depend on the deposition temperature.
Keywords
TiN, Thin Film, MOCVD, Synthesis, Optical Property
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