Journal of Nanoscience and Nanoengineering
Articles Information
Journal of Nanoscience and Nanoengineering, Vol.1, No.2, Aug. 2015, Pub. Date: Aug. 13, 2015
Beyond the Basic Tight Binding Model to Calculate Optical Transition Energies of SWCNT
Pages: 84-95 Views: 1578 Downloads: 525
Authors
[01] G. R. Ahmed Jamal, Department of Electrical and Electronic Engineering, University of Asia Pacific, Dhaka, Bangladesh.
[02] S. M. Mominuzzaman, Department of Electrical and Electronic Engineering, Bangaldesh University of Engineering and Technology, Dhaka, Bangladesh.
Abstract
The one-dimensionality of the Single Wall Carbon Nanotubes (SWCNT) give rise to 1D sub-bands in nabnotube density of states. The tight-binding (TB) model has been widely used for modeling electronic band structure of SWCNT due to its simplicity. A number of recent optical spectroscopic experiments reveal that TB model fails to give accurate quantitative and qualitative description of different optical transition energies in SWCNTs. Hence, many authors tried to improve this model through different approaches so as to extend the capacity of basic TB model to predict different optical transition energies in SWCNTs. Some tried to calculate the band structure from first principle calculations. Others proposed empirical models to fit the experimental results. This work presents a review of some important previous research works that proposed improved TB models, empirical models or first principle based models to overcome the limitation of basic TB model in calculating different optical transitions of SWCNTs. The advantage and limitation of each of these approaches are also highlighted in this work.
Keywords
SWCNT, Density of State, Optical Transition Energy, Tight Binding Model, Chiral Index
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