[01] U. S. Mbamara, Department of Physics, Federal University of Technology, Owerri, Nigeria. [02] A. I. Akinwande, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, USA. [03] I. A. O. Ojo, Department of Chemistry, Obafemi Awolowo University, Ile-Ife, Nigeria. [04] E. O. B. Ajayi, Department of Physics, Obafemi Awolowo University, Ile-Ife, Nigeria.

A novel precursor complex, the bis (glycinato-N, O) zinc, was synthesized and used to deposit zinc oxynitride thin films on SiO2 substrates at 390°C and 420°C respectively, by metalorganic chemical vapour deposition (MOCVD) technique. The thin films produced were characterized with hot probe, x-ray diffractometry (XRD), x-ray photoelectron spectroscopy (XPS) and dynamic secondary ion mass spectroscopy (SIMS). The hot probe tests showed that the thin films had p-type conductivity. XRD spectra of the films gave poorly defined peaks, signifying blurred crystallinity. The XPS analyses revealed the presence of Zn, O and N peaks, with the thin films deposited at 390°C having higher N-doping level than those deposited at 420°C. Results of dynamic SIMS tests by destructive layer analyses of the films were inconclusive. The thin films were very thin, and the results indicate that lower deposition temperatures using the new precursor may be preferred to higher temperatures. Applications of the p-type zinc oxynitride are possible in optical and solid state electronics.

Precursor, Bis (Glycinato-N, O) Zinc, MOCVD, Thin Films, P-type Zinc Oxynitride

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