International Journal of Modern Physics and Applications
Articles Information
International Journal of Modern Physics and Applications, Vol.1, No.3, Jul. 2015, Pub. Date: Jul. 10, 2015
Characterization of P-Type Zinc Oxynitride Thin Films Prepared by MOCVD Using Bis (Glycinato-N, O) Zinc Precursor
Pages: 99-105 Views: 1251 Downloads: 542
Authors
[01] U. S. Mbamara, Department of Physics, Federal University of Technology, Owerri, Nigeria.
[02] A. I. Akinwande, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, USA.
[03] I. A. O. Ojo, Department of Chemistry, Obafemi Awolowo University, Ile-Ife, Nigeria.
[04] E. O. B. Ajayi, Department of Physics, Obafemi Awolowo University, Ile-Ife, Nigeria.
Abstract
A novel precursor complex, the bis (glycinato-N, O) zinc, was synthesized and used to deposit zinc oxynitride thin films on SiO2 substrates at 390°C and 420°C respectively, by metalorganic chemical vapour deposition (MOCVD) technique. The thin films produced were characterized with hot probe, x-ray diffractometry (XRD), x-ray photoelectron spectroscopy (XPS) and dynamic secondary ion mass spectroscopy (SIMS). The hot probe tests showed that the thin films had p-type conductivity. XRD spectra of the films gave poorly defined peaks, signifying blurred crystallinity. The XPS analyses revealed the presence of Zn, O and N peaks, with the thin films deposited at 390°C having higher N-doping level than those deposited at 420°C. Results of dynamic SIMS tests by destructive layer analyses of the films were inconclusive. The thin films were very thin, and the results indicate that lower deposition temperatures using the new precursor may be preferred to higher temperatures. Applications of the p-type zinc oxynitride are possible in optical and solid state electronics.
Keywords
Precursor, Bis (Glycinato-N, O) Zinc, MOCVD, Thin Films, P-type Zinc Oxynitride
References
[01] Y. Lu, Z. Ye, Y. Zeng, W. Xu, L. Zhu and B. Zhao. Effects of RF power variation on properties of N-doped p-type ZnO thin films grown by plasma-assisted MOCVD. Optical Materials 29 (2007) 1612–1615. doi:10.1016/j.optmat.2006.08.004.
[02] V. Snitka, V. Jankauskas, A. Zunda and V. Mizariene. Deposition of nanocrystalline Zn O by wire explosion technique and characterization of the films' properties. Materials Letters 61 (2007) 1763–1766. doi:10.1016/j.matlet.2006.07.189.
[03] D. Scarano, S. Bertarione, F. Cesano, J.G. Vitillo and A. Zecchina. Plate-like zinc oxide microcrystals: Synthesis and characterization of a material active toward hydrogen adsorption. Catalysis Today 116 (2006) 433–438. doi:10.1016/j.cattod.2006.05.062.
[04] W. L. Dang, Y. Q. Fu, J. K. Luo, A.J . Flewitt and W. I. Milne. Deposition and characterization of sputtered ZnO films. Superlattices and Microstructures (2007) 1-5, doi:10.1016/j.spmi.2007.04.081.
[05] M. Hamida, A. A. Tahir, M. Mazhar, F. Ahmad, K. C. Molloy and G. Kociok-Kohn. Deposition and characterization of ZnO thin films from a novel hexanuclear zinc precursor. Inorganica Chimica Acta xxx (2007) 1-7. doi:10.1016/j.ica.2007.07.013.
[06] E. C-etino¨rgu¨, S. Goldsmith and R. L. Boxman. The effect of substrate temperature on filtered vacuum arc deposited zinc oxide and tin oxide thin films. Journal of Crystal Growth 299 (2007) 259–267. doi:10.1016/j.jcrysgro.2006.11.334.
[07] U. S. Mbamara, O. O. Akinwunmi, E. I. Obiajunwa, I. A. O. Ojo, E. O. B. Ajayi. Deposition and Characterisation of Nitrogen-Doped Zinc Oxide Thin Films by MOCVD Using Zinc Acetate—Ammonium Acetate Precursor, Journal of Modern Physics, 3 (2012). 652-659. doi:10.4236/jmp.2012.38089.
[08] E. Fortunato, P. Barquinha, A. Pimentel, A. Gonçalves, L. Pereira, A. Marques and R. Martins. Next Generation of Thin Film Transistors Based on Zinc Oxide. Mat. Res. Soc. Symp. Proc. 811 (2004). 1-6.
[09] S. T. Tan, B. J. Chen, X. W. Sun, W. J. Fan, H. S. Kwok, X. H. Zhang and S. J. Chua. Blueshift of optical band gap in ZnO thin films grown by metal-organic chemical-vapor deposition. Journal of Applied Physics 98 (013505) 2005. 1-5. doi: 10.1063/1.1940137.
[10] S. O'Brien, M. G. Nolan, M. Çopuroglu, J. A. Hamilton, I. Povey, L. Pereira, R. Martins, E. Fortunato and M. Pemble. Zinc oxide thinfilms: Characterization and potential applications. Thin Solid Films 518 (2010). 4515–4519. doi:10.1016/j.tsf.2009.12.020.
[11] S.T. Tan, B. J. Chen, X. W. Sun, M. B. Yu, X. H. Zhang and S. J. Chua. Realization of Intrinsic p-Type ZnO Thin Films by Metal organic chemical vapor deposition. Journal of Electronic Materials 34(8). 2005. 1172-1176.
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