[01] Nafie A. Almuslet, Deapertment of laser systems, Institute of laser, Sudan University of Science and Technology, Khartoum, Republic of Sudan. [02] Saad A. A. Mohammed, Electrical Engineering Department, Blue Nile University, Damazin, Sudan.

Defects arising from classical thermal annealing, electrical characteristics and dynamic resistance of silicon diode has been tried to treated by annealing with pulsed CO₂ (λ= 10.6 µm) with pulse energy ranged from 500 to 600 mJ. Each diode was exposed to 5 pulses. The results showed an improvement in the behaviour of I-V characteristics curve of the diodes and reduction in its dynamic resistance.

Laser Industrial Applications, Annealing by Laser, Silicon Diodes Annealing, CO₂ Laser Applications

[01] J. G. E. Klappe , I. Bfirsony. Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction., Thin Solid Films, 235 (1993) 189-197 [02] T. Sameshimaa, M. Hasumia, and T. Mizuno. Laser annealing of plasma-damaged silicon surface. Applied Surface Science 336 (2015) 73–78 [03] D. Sands, J.E. Nicholls, J.H.C. Hogg S. Chalk, F.X. Wagner, W.E. Hagston, et al. Pulsed laser annealing of CdTe/CdMnTe super-lattices. Journal of Crystal Growth 184/185 (1998) 114-l 18 [04] Te-Wei Chiu, Kazuhiko Tonooka, Naoto Kikuchi. Fabrication of ZnO and CuCrO2:Mg thin films by pulsed laser deposition with in situ laser annealing and its application to oxide diodes. Thin Solid Films 516 (2008) 5941–594. [05] Seiichiro Higashi, Kentaro Ozaki , and Keiji Sakamoto et al. "Electrical Properties of Excimer-Laser-Crystallized Lightly Doped Polycrystalline Silicon Films". Jpn. J. Appl. Phys. Vol.38 (1999) 857–860. [06] TEIXEIRA, R.C.; DOI, I.; ZAKIA, M. B. P.; SWART, J. W.; DINIZ, J. A. Grain. Size Influence on Sheet Resistance of P- and AS-Implanted Polycrystalline Silicon Deposited by Vertical CVD Reactor, Centre for Semiconductors Components – State University of Campinas, R. Pandiá Calógeras, 90, CEP: 13083-970, Caixa Postal 6061, Campinas – SP – Brasil (2002). [07] Wolfgang L. Kalb, Simon Haas, Cornelius Krellner, Thomas Mathis, and Bertram Batlogg. Trap density of states in small-molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals. PHYSICAL REVIEW B 81, 155315 (2010). [08] S K SADRNEZHAAD, NOUSHIN YASAVOL, MANSOUREH GANJALI, and SOHRAB SANJABI. Property change during nanosecond pulse laser annealing of amorphous NiTi thin film. Bull. Mater. Sci., Vol. 35, No. 3, June (2012), pp. 357–364. [09] D. V. Tran; Y. C. Lam; H. Y. Zheng; V. M. Murukeshan; J. C. Chai; D. E. Hardt. Femtosecond laser processing of crystalline silicon", published on Optics and Lasers in Engineering (2004). [10] Sidan Jin, "Boron Activation and Diffusion in Polycrystalline Silicon with Flash- Assist Rapid Thermal Annealing", A dissertation presented to the graduate school of the university of Florida in partial fulfilment of the required for the degree of Doctor of Philosophy, university of Florida (2011).