Physics Journal
Articles Information
Physics Journal, Vol.1, No.2, Sep. 2015, Pub. Date: Aug. 5, 2015
Defects Treatment in Silicon Diodes by Annealing with Pulsed CO2 Laser
Pages: 45-48 Views: 2005 Downloads: 1119
[01] Nafie A. Almuslet, Deapertment of laser systems, Institute of laser, Sudan University of Science and Technology, Khartoum, Republic of Sudan.
[02] Saad A. A. Mohammed, Electrical Engineering Department, Blue Nile University, Damazin, Sudan.
Defects arising from classical thermal annealing, electrical characteristics and dynamic resistance of silicon diode has been tried to treated by annealing with pulsed CO2 (λ= 10.6 µm) with pulse energy ranged from 500 to 600 mJ. Each diode was exposed to 5 pulses. The results showed an improvement in the behaviour of I-V characteristics curve of the diodes and reduction in its dynamic resistance.
Laser Industrial Applications, Annealing by Laser, Silicon Diodes Annealing, CO2 Laser Applications
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