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Physics Journal, Vol.1, No.3, Nov. 2015, Pub. Date: Nov. 12, 2015
Transmittance Spectra of ZnS Thin Film at Varying Concentration of Zinc ion Precursor
Pages: 320-324 Views: 1145 Downloads: 1285
[01] I. A. Ezenwa, Department of Industrial Physics, Faculty of Physical Sciences, Chukwuemeka Odumegwu Ojukwu University, Anambra State, Nigeria.
[02] C. I. Elekalachi, Department of Industrial Physics, Faculty of Physical Sciences, Chukwuemeka Odumegwu Ojukwu University, Anambra State, Nigeria.
Zinc sulphide (ZnS) thin films have been deposited by chemical bath method onto glass substrate at room temperature. The Transmittance spectra of the fabricated films were obtained with a Janway 6405 UV / Visible spectrophotometer in the wavelengthrange of 300nm – 1100nm. Structural and surface morphology of the films were carried out using an x-ray diffractometer with Cukα radiation and Olumpus Optical microscope. Transmittance spectra of ZnS thin film fabricated at varying concentration of zinc ion precursor show very low transmittance in the UV region, moderate transmittance in the VIS region and relatively high transmittance in the NIR (approximately 85%). There was no clear cut effect of varying concentration of zinc ion precursor on the transmittance of the deposited films in all region of the electromagnetic spectrum studied.
Zinc Sulphide, Chemical Bath Deposition, Sulphide Ion Concentration, Transmittance Spectra
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