Physics Journal
Articles Information
Physics Journal, Vol.2, No.1, Jan. 2016, Pub. Date: Dec. 6, 2015
Influences of Channel Width and Oxide Thickness on the Threshold Voltage of Fully-Depleted Four-Gates Field Effect Transistor
Pages: 11-14 Views: 1366 Downloads: 1119
[01] M. Salami, Faculty of Electrical and Computer Engineering, Hakim Sabzevari University, Sabzevar, Iran.
[02] M. H. Shahrokh Abadi, Faculty of Electrical and Computer Engineering, Hakim Sabzevari University, Sabzevar, Iran.
A mathematical model of fully-depleted ultrathin silicon on insulator with buried oxide and four individual gates field effect transistor (G4-FDSOI-FET) has been developed to determine the effects of the oxide thickness as well as the channel width on the threshold voltage. Two dimensional Poisson’s equation has been carried out to model the device. The results show that the threshold voltage depends on the back surface conditions and is a function of structural parameters of oxide thicknesses of front and back gates as well as the width and thickness of the channel.
Fully Depleted, Multi-Gate, Threshold Voltage, Silicon on Insulator, MOSFET
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